Title :
A study of soft and hard breakdown - Part II: Principles of area, thickness, and voltage scaling
Author :
Alam, Muhammad Ashraful ; Weir, Bonnie E. ; Silverman, Paul J.
Author_Institution :
Agere Syst., Murray Hill, NJ, USA
fDate :
2/1/2002 12:00:00 AM
Abstract :
For Part I see ibid., vol.49, no.2, pp.232-8 (2002). Based on the theory of soft and hard breakdown established in Part I of this paper, we now study the principles of area, thickness, voltage, and circuit configuration dependence of hard and soft breakdown. These scaling principles allow us to conclude that breakdown in ultrathin oxides stressed at operating voltages (1.0-1.5 V) can never be hard, which should allow a more relaxed reliability specification for these oxides
Keywords :
electric breakdown; 1.0 to 1.5 V; area scaling; circuit configuration; hard breakdown; reliability; soft breakdown; thickness scaling; ultrathin oxide; voltage scaling; Breakdown voltage; Capacitors; Circuits; Electric breakdown; Equations; MOS devices; Power dissipation; Semiconductor device breakdown; Semiconductor device reliability; Stress;
Journal_Title :
Electron Devices, IEEE Transactions on
