Ambipolar Schottky-barrier TFTs

Author

Lin, Horng-Chih ; Yeh, Kuan-Lin ; Huang, Tiao-Yuan ; Huang, Ruo-Gu ; Sze, Simon M.

Author_Institution

Nat. Nano Device Labs., Hsinchu, Taiwan

Volume

49

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

264

Lastpage

270

Abstract

A novel Schottky-barrier metal-oxide-semiconductor thin-film transistor (SBTFT) was successfully demonstrated and characterized. The new SBTFT device features a field-induced-drain (FID) region, which is controlled by a metal field-plate lying on top of the passivation oxide. The FID region is sandwiched between the silicided drain and the active channel region. Carrier types and the conductivity of the transistor are controlled by the metal field-plate. The device is thus capable of ambipolar operation. Excellent ambipolar performance with on/off current ratios over 10⁶ for both p- and n-channel operations was realized simultaneously on the same device fabricated with polysilicon active layer. Moreover, the off-state leakage current shows very weak dependence on the gate-to-drain voltage difference with the FID structure. Finally, the effects of FID length are explored

Keywords

MOSFET; Schottky barriers; elemental semiconductors; leakage currents; silicon; thin film transistors; Schottky-barrier metal-oxide-semiconductor thin-film transistor; Si; ambipolar operation; carrier type; electrical conductivity; field-induced-drain; metal field-plate; off-state leakage current; on/off current ratio; passivation oxide; polysilicon active layer; silicided drain; Conductivity; Fabrication; Laboratories; Leakage current; MOSFETs; P-n junctions; Passivation; Schottky barriers; Schottky diodes; Thin film transistors;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.981216

Filename

981216