Title :
A new model for enhancement-mode power pHEMT
Author :
Wei, Ce-Jun ; Tkachenko, Yevgeniy A. ; Bartle, Dylan
Author_Institution :
Dept. 780, Alpha Industries Inc, Woburn, MA, USA
fDate :
1/1/2002 12:00:00 AM
Abstract :
Optimum loading for a power enhancement-mode pseudomorphic high electron-mobility transistor (E-pHEMT) is determined by a systematic harmonic load-pull simulation. The simulation uses a modified Angelov-Parker model that can accurately predict DC, small-signal RF, and power performance of the devices. The optimum second harmonic loading for a 2-mm device is found to be open circuit and the optimum third harmonic is at the third quadrant, which is about 1∠210°. The measured versus modeled results show very good agreement and, therefore, verify the model. The simulation predicts that as high as 80% power-added efficiency can be achieved for E-pHEMT under optimum source and load termination with harmonic tuning
Keywords :
harmonic analysis; microwave field effect transistors; power HEMT; semiconductor device measurement; semiconductor device models; 2 mm; 80 percent; DC performance; E-pHEMT; enhancement-mode power pHEMT; enhancement-mode power pHEMT model; harmonic tuning; measurements; modified Angelov-Parker model; open circuit; optimum load termination; optimum loading; optimum second harmonic loading; optimum source termination; optimum third harmonic; power enhancement-mode pseudomorphic high electron-mobility transistor; power performance; power-added efficiency; simulation; small-signal RF performance; systematic harmonic load-pull simulation; Associate members; Capacitance; Circuit simulation; Equivalent circuits; PHEMTs; Power system harmonics; Power system modeling; Predictive models; Radio frequency; Wireless communication;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
