High-speed MSM/HEMT and p-i-n/HEMT monolithic photoreceivers

Author

Fay, P. ; Caneau, C. ; Adesida, I.

Author_Institution

Dept. of Electr. Eng., Notre Dame Univ., IN, USA

Volume

50

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

62

Lastpage

67

Abstract

The performance of monolithically integrated metal-semiconductor-metal/high electron-mobility transistor (MSM/HEMT) and p-i-n/HEMT photoreceivers is reported. p-i-n/HEMT photoreceivers have been designed and fabricated, resulting in measured transimpedances of 700 Ω, an 8.3-GHz bandwidth, and measured sensitivities of -17.7 dBm at 10 Gb/s and -15.8 dBm at 12 Gb/s for a 2³¹ - 1 pattern length pseudorandom bit sequence at a bit error rate of 10^-9. Low-noise MSM-based pbotoreceivers have also been designed and fabricated, and frequency response, noise, and sensitivity measurements have been performed. Sensitivities of -16.9, -13.1, and -10.7 dBm were obtained at 5, 8, and 10 Gb/s, respectively. A direct comparison of p-i-n- and MSM-based photoreceivers is undertaken on photoreceivers with matched responsivity and bandwidth. Measurement and theoretical analysis of circuit and device noise indicates an anomalous sensitivity penalty in MSM-based receivers that arises due to intersymbol interference

Keywords

error statistics; frequency response; high electron mobility transistors; integrated circuit design; integrated circuit measurement; integrated circuit noise; integrated optoelectronics; intersymbol interference; metal-semiconductor-metal structures; optical receivers; p-i-n photodiodes; 10 Gbit/s; 12 Gbit/s; 5 Gbit/s; 700 ohm; 8 Gbit/s; 8.3 GHz; MSM photodetectors; MSM-based photoreceivers; MSM/HEMT monolithic photoreceivers; anomalous sensitivity penalty; bandwidth; bit error rate; circuit noise; device noise; frequency response; high-speed photoreceivers; intersymbol interference; matched responsivity/bandwidth; metal-semiconductor-metal/high electron-mobility transistor photoreceivers; monolithically integrated photoreceivers; noise; optoelectronic integrated circuits; p-i-n photodiodes; p-i-n-based photoreceivers; p-i-n/HEMT monolithic photoreceivers; p-i-n/high electron-mobility transistor photoreceivers; pattern length; photoreceivers; pseudorandom bit sequence; sensitivities; sensitivity; transimpedances; Bandwidth; Bit error rate; Circuit noise; Frequency measurement; Frequency response; HEMTs; Length measurement; MODFETs; Noise measurement; PIN photodiodes;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.981247

Filename

981247