Direct extraction of linear HBT-model parameters using nine analytical expression blocks

Author

Ouslimani, Achour ; Gaubert, Jean ; Hafdallah, Habiba ; Birafane, Ahmed ; Pouvil, Pierre ; Leier, H.

Author_Institution

Ecole Nationale Superieure de l´´Electronique et de ses Applications, Cergy Pontoise, France

Volume

50

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

218

Lastpage

221

Abstract

A method to determine the heterojunction bipolar transistor (HBT) equivalent-circuit elements without numerical optimizations is presented. It is based on the extraction of nine analytical expressions, which are referred to here as "blocks." The model elements are extracted using certain blocks for some of them and three nonlinear equations derived from a combination of four expression blocks for some others. The base and collector resistances can be determined at each bias point. The method is validated treating the on-wafer HBTs

Keywords

equivalent circuits; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device models; analytical expressions; base resistance; bias point; collector resistance; direct extraction; equivalent-circuit elements; heterojunction bipolar transistor; linear HBT model parameters; parameter extraction; Capacitance; Circuit testing; Equivalent circuits; Gallium arsenide; Heterojunction bipolar transistors; Impedance; Nonlinear equations; Optimization methods; Parameter extraction; Polynomials;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.981270

Filename

981270