DocumentCode :
1559803
Title :
The silicon radio decade
Author :
Sevenhans, Jan ; Eynde, Frank Op´t ; Reusens, Peter
Author_Institution :
Alcatel Bell, Antwerp, Belgium
Volume :
50
Issue :
1
fYear :
2002
fDate :
1/1/2002 12:00:00 AM
Firstpage :
235
Lastpage :
244
Abstract :
During the 1990s, we witnessed a string of advances in silicon RF integration: from the introduction of the first integrated silicon bipolar radios for groupe special mobile (GSM) and digital European cordless telephone in the late 1980s toward full single-chip integration capabilities based on silicon-germanium BiCMOS technologies. Where RF design used to be a black art, it is becoming a "normal practice" today. In this paper, the authors look back on the past ten years of circuits, silicon technology, and system research with roots in standardization and a scope reaching from the early ideas to the final product success on the market and some perspective toward new concepts and systems
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; UHF integrated circuits; elemental semiconductors; integrated circuit design; integrated circuit technology; radio equipment; silicon; BiCMOS technologies; RF ASICs; RF CMOS; RF design; RFIC; Si; Si technology; SiGe; SiGe technology; circuit interfaces; integrated inductors; radio front-end ICs; receiver topology; spiral inductors; standardization; system research; transceiver architectures; transmitter topology; Atomic layer deposition; CMOS technology; Circuits; Gallium arsenide; Germanium silicon alloys; Paper technology; Radio frequency; Silicon germanium; Telephony; Transceivers;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.981276
Filename :
981276
Link To Document :
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