Title :
Differentially driven symmetric microstrip inductors
Author :
Danesh, Mina ; Long, John R.
Author_Institution :
Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada
fDate :
1/1/2002 12:00:00 AM
Abstract :
A differentially excited symmetric inductor that enhances inductor quality (Q) factor on silicon RFICs is presented. Compared with an equivalent single-ended configuration, experimental data demonstrate that the differential inductor offers a 50% greater Q factor and a broader range of operating frequencies. Predictions from full-wave simulations and a physics-based SPICE-compatible model are validated by experimental measurements on an inductor fabricated in a triple-level metal silicon technology. Application of the symmetric inductor to a cross-coupled oscillator improves output voltage swing and phase noise by 75% and 1.8 dB, respectively (for a given power consumption), while chip area is reduced by 35% compared to conventional inductor equivalents
Keywords :
Q-factor; UHF integrated circuits; UHF oscillators; equivalent circuits; inductors; microstrip components; monolithic integrated circuits; silicon; RFIC passive components; Si; Si RFICs; cross-coupled oscillator; differential inductor; differentially driven microstrip inductors; differentially excited symmetric inductor; full-wave simulations; inductor Q-factor; inductor quality factor; monolithic microstrip inductor; output voltage swing; phase noise improvement; physics-based SPICE-compatible model; symmetric microstrip inductors; triple-level metal Si technology; Frequency; Inductors; Microstrip; Phase noise; Predictive models; Q factor; Radiofrequency integrated circuits; Semiconductor device measurement; Silicon; Voltage-controlled oscillators;
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
