Differentially driven symmetric microstrip inductors

Author

Danesh, Mina ; Long, John R.

Author_Institution

Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada

Volume

50

Issue

1

fYear

2002

fDate

1/1/2002 12:00:00 AM

Firstpage

332

Lastpage

341

Abstract

A differentially excited symmetric inductor that enhances inductor quality (Q) factor on silicon RFICs is presented. Compared with an equivalent single-ended configuration, experimental data demonstrate that the differential inductor offers a 50% greater Q factor and a broader range of operating frequencies. Predictions from full-wave simulations and a physics-based SPICE-compatible model are validated by experimental measurements on an inductor fabricated in a triple-level metal silicon technology. Application of the symmetric inductor to a cross-coupled oscillator improves output voltage swing and phase noise by 75% and 1.8 dB, respectively (for a given power consumption), while chip area is reduced by 35% compared to conventional inductor equivalents

Keywords

Q-factor; UHF integrated circuits; UHF oscillators; equivalent circuits; inductors; microstrip components; monolithic integrated circuits; silicon; RFIC passive components; Si; Si RFICs; cross-coupled oscillator; differential inductor; differentially driven microstrip inductors; differentially excited symmetric inductor; full-wave simulations; inductor Q-factor; inductor quality factor; monolithic microstrip inductor; output voltage swing; phase noise improvement; physics-based SPICE-compatible model; symmetric microstrip inductors; triple-level metal Si technology; Frequency; Inductors; Microstrip; Phase noise; Predictive models; Q factor; Radiofrequency integrated circuits; Semiconductor device measurement; Silicon; Voltage-controlled oscillators;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.981285

Filename

981285