Title :
0.12 μm transferred-substrate In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As HEMTs on silicon wafer
Author :
Bollaert, S. ; Wallaert, X. ; Lepilliet, S. ; Cappy, A. ; Jalaguier, E. ; Pocas, S. ; Aspar, B.
Author_Institution :
Departement Hyperfrequences et Semiconducteurs, Inst. d´Electronique et de Microelectronique du Nord, Villeneuve d´Ascq, France
Abstract :
New In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As transferred-substrate high electron mobility transistors (TS-HEMTs) have been successfully fabricated on 2-in Silicon substrate with 0.12 μm T-shaped gate length. These new TS-HEMTs exhibit typical drain currents of 450 mA/mm and extrinsic transconductance up to 770 mS/mm. An extrinsic current gain cutoff frequency fT of 185 GHz is obtained. That result is the first reported for In/sub 0.52/Al/sub 0.48/As/In/sub 0.53/Ga/sub 0.47/As TS-HEMTs on Silicon substrate.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; high electron mobility transistors; indium compounds; substrates; 0.12 micron; 185 GHz; 2 in; In/sub 0.52/Al/sub 0.48/As-In/sub 0.53/Ga/sub 0.47/As; In/sub 0.62/Al/sub 0.48/As/In/sub 0.63/Ga/sub 0.47/As transferred-substrate high electron mobility transistor; Si; T-shaped gate; drain current; extrinsic current gain cutoff frequency; extrinsic transconductance; silicon wafer; Cutoff frequency; Electron mobility; HEMTs; Indium compounds; Indium gallium arsenide; Indium phosphide; MODFETs; Schottky barriers; Silicon; Substrates;
Journal_Title :
Electron Device Letters, IEEE
