Sub-40 nm SOI V-groove n-MOSFETs

Author

Appenzeller, J. ; Martel, R. ; Avouris, Ph. ; Knoch, J. ; Scholvin, J. ; del Alamo, J.A. ; Rice, P. ; Solomon, P.

Author_Institution

IBM Thomas J. Watson Res. Center, Yorktown Heights, NY, USA

Volume

23

Issue

2

fYear

2002

Firstpage

100

Lastpage

102

Abstract

We present output and transfer characteristics of single-gated, 36 nm, 46 nm and 56 nm channel length SOI MOSFETs with a V-groove design. For the shortest devices we find transconductances as high as 900 μS/μm and drive currents of 490 μA/μm at V/sub gs/ - V/sub th/=0.6 V. The V-groove approach combines the advantages of a controlled, extremely abrupt doping profile between the highly doped source/drain and the undoped channel region with an excellent suppression of short-channel effects. In addition, our V-groove design has the potential of synthesizing devices in the 10 nm range.

Keywords

MOSFET; doping profiles; silicon-on-insulator; 0.6 V; 36 to 56 nm; 9E5 muS/mm; SOI NMOSFETs; SOI V-groove n-MOSFETs; Si; controlled abrupt doping profile; drive currents; highly doped source/drain; n-channel MOSFET; output characteristics; short-channel effects suppression; single-gated MOSFETs; transconductances; transfer characteristics; ultrashort channel devices; undoped channel region; Anisotropic magnetoresistance; Doping profiles; Electrons; Epitaxial growth; Etching; Fabrication; Ion implantation; MOSFET circuits; Molecular beam epitaxial growth; Silicon;

fLanguage

English

Journal_Title

Electron Device Letters, IEEE

Publisher

ieee

ISSN

0741-3106

Type

jour

DOI

10.1109/55.981319

Filename

981319