Title :
Bit-wise read-compare-write scheme for low power read-modify-write DRAM operation
Author :
Park, Y.-H. ; Choi, S. ; Yoo, Hoi-Jun
Author_Institution :
Dept. of Electr. Eng., Korea Adv. Inst. of Sci. & Technol., Taejon, South Korea
fDate :
1/17/2002 12:00:00 AM
Abstract :
In order to save power consumption in read-modify-write (RMW) DRAM operation, a bit-wise read-compare-write (RCW) scheme is presented. Its power consumption depends on the number of bits that have to be updated by the bit-wise compare result between the read data and the modified data. If a random bit-wise update ratio is assumed, a 11.6% power saving is achieved when the proposed scheme is applied to the previous design
Keywords :
DRAM chips; integrated circuit design; logic design; low-power electronics; DRAM design; bit updating; bit-wise compare result; bit-wise read-compare-write scheme; low power read-modify-write DRAM operation; modified data; power consumption; power saving; random bit-wise update ratio; read data; read-modify-write DRAM operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020069
