• DocumentCode
    1559924
  • Title

    GaAs-based quantum cascade lasers with native oxide-defined current confinement

  • Author

    Steer, M.J. ; Carder, D.A. ; Wilson, L.R. ; Cockburn, J.W. ; Hopkinson, M. ; Chia, C.K. ; Airey, R. ; Hill, G.

  • Author_Institution
    Dept. of Phys. & Astron., Univ. of Sheffield, UK
  • Volume
    38
  • Issue
    2
  • fYear
    2002
  • fDate
    1/17/2002 12:00:00 AM
  • Firstpage
    75
  • Lastpage
    77
  • Abstract
    The development of broad area (width ≈100 μm) GaAs-based quantum cascade lasers (QCLs) with 20 μm-wide current apertures defined by selective oxidation of the Al0.9Ga0.1As optical cladding layers is reported. Processing the lasers in this way enhances heat removal from the active region of the structure, allowing improved pulsed performance at higher duty cycles compared with conventional ridge waveguide structures
  • Keywords
    III-V semiconductors; claddings; gallium arsenide; oxidation; quantum well lasers; 100 micron; 20 micron; Al0.9Ga0.1As; Al0.9Ga0.1As optical cladding layers; GaAs; GaAs-based quantum cascade lasers; active region; broad area; current apertures; heat removal; higher duty cycles; improved pulsed performance; native oxide-defined current confinement; selective oxidation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:20020067
  • Filename
    981577
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1559924