Title :
GaAs-based quantum cascade lasers with native oxide-defined current confinement
Author :
Steer, M.J. ; Carder, D.A. ; Wilson, L.R. ; Cockburn, J.W. ; Hopkinson, M. ; Chia, C.K. ; Airey, R. ; Hill, G.
Author_Institution :
Dept. of Phys. & Astron., Univ. of Sheffield, UK
fDate :
1/17/2002 12:00:00 AM
Abstract :
The development of broad area (width ≈100 μm) GaAs-based quantum cascade lasers (QCLs) with 20 μm-wide current apertures defined by selective oxidation of the Al0.9Ga0.1As optical cladding layers is reported. Processing the lasers in this way enhances heat removal from the active region of the structure, allowing improved pulsed performance at higher duty cycles compared with conventional ridge waveguide structures
Keywords :
III-V semiconductors; claddings; gallium arsenide; oxidation; quantum well lasers; 100 micron; 20 micron; Al0.9Ga0.1As; Al0.9Ga0.1As optical cladding layers; GaAs; GaAs-based quantum cascade lasers; active region; broad area; current apertures; heat removal; higher duty cycles; improved pulsed performance; native oxide-defined current confinement; selective oxidation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020067
