Title :
AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE
Author :
Cordier, Y. ; Semond, E. ; Massies, J. ; Dessertene, B. ; Cassette, S. ; Surrugue, M. ; Adam, D. ; Delage, S.L.
Author_Institution :
CNRS, Valbonne, France
fDate :
1/17/2002 12:00:00 AM
Abstract :
Al0.3Ga0.7N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH3). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility arc obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show ft of 17 GHz and fmax of 40 GHz
Keywords :
Hall mobility; III-V semiconductors; S-parameters; aluminium compounds; chemical beam epitaxial growth; current density; gallium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor growth; wide band gap semiconductors; 17 GHz; 40 GHz; AlGaN-GaN; Hall mobility; S-parameter measurements; Si; drain-source current; gas-source MBE; high electron mobility transistor; high power capability; high sheet carrier density; intermediate layer; maximum extrinsic transconductance; resistive buffer layer; resistive substrate; small-signal measurements; two-dimensional electron gas;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020060
