AlGaN/GaN HEMTs on resistive Si(111) substrate grown by gas-source MBE

Author

Cordier, Y. ; Semond, E. ; Massies, J. ; Dessertene, B. ; Cassette, S. ; Surrugue, M. ; Adam, D. ; Delage, S.L.

Author_Institution

CNRS, Valbonne, France

Volume

38

Issue

2

fYear

2002

fDate

1/17/2002 12:00:00 AM

Firstpage

91

Lastpage

92

Abstract

Al_0.3Ga_0.7N/GaN high electron mobility transistor (HEMT) structures have been grown on resistive Si(111) substrate by molecular beam epitaxy (MBE) using ammonia (NH₃). The use of an AlN/GaN intermediate layer allows a resistive buffer layer to be obtained. High sheet carrier density and high electron mobility arc obtained in the channel. A device with 0.5 μm gate length has been realised exhibiting a maximum extrinsic transconductance of 160 mS/mm and drain-source current exceeding 600 mA/mm. Small-signal measurements show f_t of 17 GHz and f_max of 40 GHz

Keywords

Hall mobility; III-V semiconductors; S-parameters; aluminium compounds; chemical beam epitaxial growth; current density; gallium compounds; microwave field effect transistors; microwave power transistors; millimetre wave field effect transistors; millimetre wave power transistors; power HEMT; semiconductor growth; wide band gap semiconductors; 17 GHz; 40 GHz; AlGaN-GaN; Hall mobility; S-parameter measurements; Si; drain-source current; gas-source MBE; high electron mobility transistor; high power capability; high sheet carrier density; intermediate layer; maximum extrinsic transconductance; resistive buffer layer; resistive substrate; small-signal measurements; two-dimensional electron gas;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020060

Filename

981587