Title :
Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor
Author :
Pan, H.J. ; Lin, K.W. ; Yu, K.H. ; Cheng, C.C. ; Thei, K.B. ; Liu, W.C. ; Chen, H.I.
Author_Institution :
Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan
fDate :
1/17/2002 12:00:00 AM
Abstract :
A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures
Keywords :
MIS devices; Schottky barriers; Schottky diodes; adsorption; catalysts; desorption; gas sensors; hydrogen; indium compounds; palladium; reaction kinetics; Fermi-level pinning; H2; I-V characteristics; Langmuir response; MOS Schottky diode; Pd; Pd-InP; catalytic metal based sensors; donor level role; enhanced barrier height; high adsorption rates; high desorption rates; high sensitivity; high temperatures; hydrogen sensor; interfacial oxide layer; planar fabricated diode; reaction kinetics; short recovery times; short response times; transient characteristics;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020001
