Highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor Schottky diode hydrogen sensor

Author

Pan, H.J. ; Lin, K.W. ; Yu, K.H. ; Cheng, C.C. ; Thei, K.B. ; Liu, W.C. ; Chen, H.I.

Author_Institution

Dept. of Electr. Eng., Nat. Cheng Kung Univ., Tainan, Taiwan

Volume

38

Issue

2

fYear

2002

fDate

1/17/2002 12:00:00 AM

Firstpage

92

Lastpage

94

Abstract

A highly hydrogen-sensitive Pd/InP metal-oxide-semiconductor (MOS) Schottky diode hydrogen sensor is presented. The role of donor level in the interfacial oxide layer replacing the amphoteric native defects leads to enhanced barrier height and high sensitivity. According to reaction kinetics studies, the maximum change in barrier height achieves 0.31 eV. Short response and recovery times in the transient characteristics demonstrate the high hydrogen adsorption and desorption rates at high temperatures

Keywords

MIS devices; Schottky barriers; Schottky diodes; adsorption; catalysts; desorption; gas sensors; hydrogen; indium compounds; palladium; reaction kinetics; Fermi-level pinning; H₂; I-V characteristics; Langmuir response; MOS Schottky diode; Pd; Pd-InP; catalytic metal based sensors; donor level role; enhanced barrier height; high adsorption rates; high desorption rates; high sensitivity; high temperatures; hydrogen sensor; interfacial oxide layer; planar fabricated diode; reaction kinetics; short recovery times; short response times; transient characteristics;

fLanguage

English

Journal_Title

Electronics Letters

Publisher

iet

ISSN

0013-5194

Type

jour

DOI

10.1049/el:20020001

Filename

981588