Title :
Temperature dependence of Sb-heterostructure millimetre-wave diodes
Author :
Schulman, J.N. ; Holabird, K.S. ; Chow, D.H. ; Dunlap, H.L. ; Thomas, S. ; Croke, E.T.
Author_Institution :
Hughes Res. Labs., Malibu, CA, USA
fDate :
1/17/2002 12:00:00 AM
Abstract :
The current against voltage characteristics of Sb-heterostructure zero-bias millimetre-wave diodes were measured from 15 to 81°C. No significant variation in the zero-bias junction resistance or curvature coefficient was found. The new diode is the first that provides temperature independent direct detection capability at and beyond W-band
Keywords :
III-V semiconductors; aluminium compounds; characteristics measurement; gallium compounds; indium compounds; millimetre wave diodes; semiconductor device measurement; semiconductor heterojunctions; 15 to 81 degC; III V semiconductors; InAs-GaAlSb; Sb-heterostructure diodes; W-band; current-voltage characteristics; curvature coefficient; junction resistance; millimetre-wave diodes; temperature independent direct detection; zero-bias diodes;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:20020070
