DocumentCode :
1560046
Title :
Direct extraction of FET noise models from noise figure measurements
Author :
Rudolph, Matthias ; Doerner, Ralf ; Heymann, Peter ; Klapproth, Lars ; Böck, Georg
Author_Institution :
Microwave Dept., Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany
Volume :
50
Issue :
2
fYear :
2002
fDate :
2/1/2002 12:00:00 AM
Firstpage :
461
Lastpage :
464
Abstract :
An algorithm is presented that allows for noniterative extraction of the parameters of the Pucel and Pospieszalski FET noise models directly from noise-figure measurements. Since the goal is to minimize the number of source-pull measurements, the number of different source admittances required as a minimum to determine the model parameters reliably is investigated. It turns out that, in the case of the Pospieszalski model, 50-Ω measurements are sufficient, while in case of the Pucel model, three additional source impedances have to be taken into account. The results are verified by investigating MESFET and pseudomorphic high electron-mobility transistor devices
Keywords :
Schottky gate field effect transistors; electric noise measurement; high electron mobility transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; 50 ohm; FET noise model; MESFET; PHEMT; Pospieszalski model; Pucel model; noise figure measurement; noniterative algorithm; parameter extraction; source admittance; source impedance; source-pull measurement; Circuit noise; FETs; Frequency measurement; Impedance measurement; MESFETs; Noise cancellation; Noise figure; Noise measurement; PHEMTs; Semiconductor device noise;
fLanguage :
English
Journal_Title :
Microwave Theory and Techniques, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9480
Type :
jour
DOI :
10.1109/22.982224
Filename :
982224
Link To Document :
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