Direct extraction of FET noise models from noise figure measurements

Author

Rudolph, Matthias ; Doerner, Ralf ; Heymann, Peter ; Klapproth, Lars ; Böck, Georg

Author_Institution

Microwave Dept., Ferdinand-Braun-Inst. fur Hochsfrequenstech., Berlin, Germany

Volume

50

Issue

2

fYear

2002

fDate

2/1/2002 12:00:00 AM

Firstpage

461

Lastpage

464

Abstract

An algorithm is presented that allows for noniterative extraction of the parameters of the Pucel and Pospieszalski FET noise models directly from noise-figure measurements. Since the goal is to minimize the number of source-pull measurements, the number of different source admittances required as a minimum to determine the model parameters reliably is investigated. It turns out that, in the case of the Pospieszalski model, 50-Ω measurements are sufficient, while in case of the Pucel model, three additional source impedances have to be taken into account. The results are verified by investigating MESFET and pseudomorphic high electron-mobility transistor devices

Keywords

Schottky gate field effect transistors; electric noise measurement; high electron mobility transistors; semiconductor device measurement; semiconductor device models; semiconductor device noise; 50 ohm; FET noise model; MESFET; PHEMT; Pospieszalski model; Pucel model; noise figure measurement; noniterative algorithm; parameter extraction; source admittance; source impedance; source-pull measurement; Circuit noise; FETs; Frequency measurement; Impedance measurement; MESFETs; Noise cancellation; Noise figure; Noise measurement; PHEMTs; Semiconductor device noise;

fLanguage

English

Journal_Title

Microwave Theory and Techniques, IEEE Transactions on

Publisher

ieee

ISSN

0018-9480

Type

jour

DOI

10.1109/22.982224

Filename

982224