Title :
A 5.7 GHz interpolative VCO using InGaP/GaAs HBT technology
Author :
Yu, Shih-An ; Meng, Chin-Chun ; Lu, Shey-Shi
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei, Taiwan
Abstract :
A 5.7 GHz monolithic interpolative voltage-controlled oscillator using InGaP/GaAs HBT technology is demonstrated for the first time. Frequency tuning is achieved by changing the open loop gain instead of the tank capacitor. The experimental result showed that a 500 MHz tuning range at 5.7 GHz was realized, which can meet the requirement of 5.7 GHz ISM band.
Keywords :
III-V semiconductors; MMIC oscillators; SPICE; bipolar MMIC; circuit tuning; gallium arsenide; gallium compounds; indium compounds; negative resistance circuits; transfer functions; voltage-controlled oscillators; 5.7 GHz; Gilbert quad; HBT IC process; HBT technology; ISM band; InGaP-GaAs; Star-HSPICE; core circuit; cross-coupled differential pair oscillator; frequency tuning; monolithic interpolative VCO; negative resistance oscillator; open loop gain change; open loop transfer function; phase noise; single-to-differential converting circuit; BiCMOS integrated circuits; Circuit optimization; Circuit testing; Gallium arsenide; Heterojunction bipolar transistors; Resonant frequency; Tuning; Varactors; Voltage control; Voltage-controlled oscillators;
Journal_Title :
Microwave and Wireless Components Letters, IEEE
DOI :
10.1109/7260.982869
