Title :
Proton damage in advanced laser diodes
Author :
Johnston, A.H. ; Miyahira, T.F. ; Rax, B.G.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Proton radiation damage in laser diodes is investigated for several types of laser diodes with wavelengths from 650 to 1550 nm. Key parameters include slope efficiency, threshold current, and the transition characteristics between laser-emitting diode (LED) and laser operation. Some of the devices exhibited nonlinear relationships between threshold current and proton fluence. All of the lasers, including vertical-cavity surface-emitting lasers, were strongly affected by recombination-enhanced annealing, in contrast to double-heterojunction LEDs, which are only slightly affected by annealing. Analysis of laser characteristics after irradiation showed that the main effect of radiation damage is an increase in bulk recombination that increases loss within the laser cavity
Keywords :
annealing; electron-hole recombination; proton effects; semiconductor lasers; surface emitting lasers; 650 to 1550 nm; double-heterojunction LED; laser cavity loss; laser diode; proton damage; recombination-enhanced annealing; slope efficiency; threshold current; vertical-cavity surface-emitting laser; Diode lasers; Laser transitions; Lattices; Optical materials; Protons; Radiative recombination; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Journal_Title :
Nuclear Science, IEEE Transactions on
