Proton damage in advanced laser diodes

Author

Johnston, A.H. ; Miyahira, T.F. ; Rax, B.G.

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1764

Lastpage

1772

Abstract

Proton radiation damage in laser diodes is investigated for several types of laser diodes with wavelengths from 650 to 1550 nm. Key parameters include slope efficiency, threshold current, and the transition characteristics between laser-emitting diode (LED) and laser operation. Some of the devices exhibited nonlinear relationships between threshold current and proton fluence. All of the lasers, including vertical-cavity surface-emitting lasers, were strongly affected by recombination-enhanced annealing, in contrast to double-heterojunction LEDs, which are only slightly affected by annealing. Analysis of laser characteristics after irradiation showed that the main effect of radiation damage is an increase in bulk recombination that increases loss within the laser cavity

Keywords

annealing; electron-hole recombination; proton effects; semiconductor lasers; surface emitting lasers; 650 to 1550 nm; double-heterojunction LED; laser cavity loss; laser diode; proton damage; recombination-enhanced annealing; slope efficiency; threshold current; vertical-cavity surface-emitting laser; Diode lasers; Laser transitions; Lattices; Optical materials; Protons; Radiative recombination; Semiconductor lasers; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983128

Filename

983128