Correlation of proton radiation damage in InGaAs-GaAs quantum-well light-emitting diodes

Author

Walters, Robert J. ; Messenger, Scott R. ; Summers, Geoffrey P. ; Burke, Edward A. ; Khanna, Shyam M. ; Estan, Diego ; Erhardt, Lorne S. ; Liu, Hui Chun ; Gao, Mae ; Buchanan, Margaret ; SpringThorpe, Anthony J. ; Houdayer, Alain ; Carlone, Cosmo

Author_Institution

US Naval Res. Lab., Washington, DC, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1773

Lastpage

1777

Abstract

The effect of proton irradiation of InGaAs/GaAs quantum-well (QW) light-emitting diodes (LEDs) has been studied at energies ranging from 1 to 500 MeV in order to determine device damage mechanisms. The data are analyzed in terms of the theory of Rose and Barnes (1982), and complete correlation of the data over the entire proton energy range was achieved. This degradation data, along with data from other GaAs-based optoelectronic devices, are discussed in terms of the nonionizing energy loss (NIEL). The energy dependences of the various damage coefficients for proton energies greater than about 10 MeV are bounded by the total NIEL and the elastic NIEL

Keywords

III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; proton effects; quantum well devices; 1 to 500 MeV; InGaAs-GaAs; InGaAs/GaAs QW LEDs; QW light-emitting diodes; damage coefficients; degradation data; device damage mechanisms; energy dependences; nonionizing energy loss; optoelectronic devices; proton irradiation; proton radiation damage; quantum-well LEDs; Data analysis; Degradation; Energy loss; Gallium arsenide; Indium gallium arsenide; Light emitting diodes; Optoelectronic devices; Protons; Quantum well devices; Quantum wells;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983129

Filename

983129