Title :
Catastrophic latchup in CMOS analog-to-digital converters
Author :
Miyahira, T.F. ; Johnston, A.H. ; Becker, H.N. ; LaLumondiere, S.D. ; Moss, S.C.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Heavy-ion latchup is investigated for analog-to-digital converters. Differences in cross section for various ions show that charge is collected at depths beyond 50 μm, causing the cross section to be underestimated unless long-range ions are used. Current distributions, thermal imaging, and diagnostic tests with a pulsed laser were used to identify latchup-sensitive regions. Latchup in one of the circuit types was catastrophic, even when the power was turned off within 2 ms of a latchup event. Examination of damaged devices with a scanning electron microscope showed that the failures occurred in metallization and contact regions. Current density for failure agrees with pulsed current metallization stress data in the literature
Keywords :
CMOS digital integrated circuits; analogue-digital conversion; current density; failure analysis; integrated circuit metallisation; integrated circuit reliability; integrated circuit testing; ion beam effects; radiation hardening (electronics); scanning electron microscopy; 2 ms; 50 micron; CMOS analog-to-digital converters; catastrophic latchup; contact regions; cross section; current density; current distributions; damaged devices; diagnostic tests; failures; heavy-ion latchup; latchup-sensitive regions; long-range ions; metallization; pulsed current metallization stress data; pulsed laser; scanning electron microscopy; thermal imaging; Analog-digital conversion; Circuits; Current distribution; Laboratories; Metallization; NASA; Power supplies; Propulsion; Space technology; Substrates;
Journal_Title :
Nuclear Science, IEEE Transactions on
