Title :
An improved stripe-cell SEGR hardened power MOSFET technology
Author :
Savage, Mark W. ; Burton, Donald I. ; Wheatley, C. Frank ; Titus, Jeffrey L. ; Gillberg, James E.
Author_Institution :
NAVSEA Crane, IN, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
A new single-event gate rupture radiation-hardened power MOSFET is reported. It is based upon a well-established radiation-hardened technology described in 1996. The hexagonal cells used in prior work are replaced with a stripe-cell structure producing demonstrated performance improvements
Keywords :
power MOSFET; radiation hardening (electronics); semiconductor technology; space vehicle electronics; LET; performance improvements; power MOSFET; radiation-hardened MOSFET; roll angle; single-event gate rupture; stripe-cell structure; tilt angle; Cranes; Electrons; FETs; MOSFET circuits; Manufacturing; Power MOSFET; Protons; Space technology; Termination of employment; Topology;
Journal_Title :
Nuclear Science, IEEE Transactions on
