Title :
A study of ion energy and its effects upon an SEGR-hardened stripe-cell MOSFET technology [space-based systems]
Author :
Titus, Jeffrey L. ; Wheatley, C. Frank ; Gillberg, James E. ; Burton, Donald I.
Author_Institution :
NAVSEA Crane, IN, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Experimental observations of an improved single-event gate rupture (SEGR) hardened stripe-cell MOSFET demonstrated that ion beam energy, penetration depth, and strike angle (tilt angle) have a significant influence upon the measured SEGR failure threshold voltage
Keywords :
ion beam effects; power MOSFET; radiation hardening (electronics); semiconductor device reliability; space vehicle electronics; LET; SEGR-hardened technology; charge deposition; failure threshold voltage; hexagonal cell; ion effects; ion energy; penetration depth; power MOSFET; single-event gate rupture; space-based systems; strike angle; stripe-cell MOSFET; tilt angle; Cranes; Electrons; Energy measurement; Ion beams; MOSFET circuits; Manufacturing; Neck; Power MOSFET; Protons; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
