SEU-sensitive volumes in bulk and SOI SRAMs from first-principles calculations and experiments

Author

Dodd, P.E. ; Shaneyfelt, M.R. ; Horn, K.M. ; Walsh, D.S. ; Hash, G.L. ; Hill, T.A. ; Draper, B.L. ; Schwank, J.R. ; Sexton, F.W. ; Winokur, P.S.

Author_Institution

Sandia Nat. Labs., Albuquerque, NM, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1893

Lastpage

1903

Abstract

Large-scale three-dimensional (3D) device simulations, focused ion microscopy, and broadbeam heavy-ion experiments are used to determine and compare the SEU-sensitive volumes of bulk-Si and SOI CMOS SRAMs. Single-event upset maps and cross-section curves calculated directly from 3D simulations show excellent agreement with broadbeam cross section curves and microbeam, charge collection and upset images for 16 K bulk-Si SRAMs. Charge-collection and single-event upset (SEU) experiments on 64 K and 1 M SOI SRAMs indicate that drain strikes can cause single-event upsets in SOI ICs. 3D simulations do not predict this result, which appears to be due to anomalous charge collection from the substrate through the buried oxide. This substrate charge-collection mechanism can considerably increase the SEU-sensitive volume of SOI SRAMs, and must be included in single-event models if they are to provide accurate predictions of SOI device response in radiation environments

Keywords

CMOS memory circuits; SRAM chips; circuit simulation; focused ion beam technology; integrated circuit modelling; integrated circuit testing; ion beam effects; silicon-on-insulator; 1 Mbit; 16 Kbit; 64 Kbit; CMOS; SEU-sensitive volumes; SOI SRAMs; anomalous charge collection; broadbeam heavy-ion experiments; bulk SRAMs; cross-section curves; drain strikes; first-principles calculations; focused ion microscopy; large-scale three-dimensional device simulations; microbeam charge collection images; radiation environments; single-event upset maps; CMOS technology; Manufacturing; Microscopy; Predictive models; Random access memory; Silicon on insulator technology; Single event upset; Space technology; US Department of Energy; Voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983148

Filename

983148