Heavy-ion-induced soft breakdown of thin gate oxides

Author

Conley, J.F., Jr. ; Suehle, J.S. ; Johnston, A.H. ; Wang, B. ; Miyahara, T. ; Vogel, E.M. ; Bernstein, J.B.

Author_Institution

NASA Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

1913

Lastpage

1916

Abstract

Heavy-ion-induced soft and hard breakdown are investigated in thin gate oxides as a function of linear energy transfer, fluence, and voltage applied during irradiation. It is found that postirradiation oxide conduction is well described by the Sune quantum point contact model

Keywords

MIS devices; MOS capacitors; MOS integrated circuits; dielectric thin films; integrated circuit reliability; ion beam effects; leakage currents; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOS technology; SiO₂-Si; Sune quantum point contact model; applied voltage; device irradiation; dielectric breakdown; fluence; heavy ions; heavy-ion-induced hard breakdown; heavy-ion-induced soft breakdown; linear energy transfer; microelectronics; postirradiation oxide conduction; thin gate oxides; Breakdown voltage; Capacitors; Electric breakdown; Energy exchange; Gold; Laboratories; Microelectronics; Propulsion; Testing; Threshold voltage;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983150

Filename

983150