Title :
Heavy-ion-induced soft breakdown of thin gate oxides
Author :
Conley, J.F., Jr. ; Suehle, J.S. ; Johnston, A.H. ; Wang, B. ; Miyahara, T. ; Vogel, E.M. ; Bernstein, J.B.
Author_Institution :
NASA Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Heavy-ion-induced soft and hard breakdown are investigated in thin gate oxides as a function of linear energy transfer, fluence, and voltage applied during irradiation. It is found that postirradiation oxide conduction is well described by the Sune quantum point contact model
Keywords :
MIS devices; MOS capacitors; MOS integrated circuits; dielectric thin films; integrated circuit reliability; ion beam effects; leakage currents; semiconductor device breakdown; semiconductor device models; semiconductor device reliability; MOS technology; SiO2-Si; Sune quantum point contact model; applied voltage; device irradiation; dielectric breakdown; fluence; heavy ions; heavy-ion-induced hard breakdown; heavy-ion-induced soft breakdown; linear energy transfer; microelectronics; postirradiation oxide conduction; thin gate oxides; Breakdown voltage; Capacitors; Electric breakdown; Energy exchange; Gold; Laboratories; Microelectronics; Propulsion; Testing; Threshold voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
