A new physics-based model for understanding single-event gate rupture in linear devices

This paper presents a new physics-based model for understanding the basic mechanism of single-event gate rupture (SEGR) in analog devices. This model accounts for the different competing physics mechanisms, such as carrier drift, diffusion, recombination in the drift diffusion, and Poisson´s equations, to explain the dependence of SEGR on biasing voltage, cross section, and critical electric field strength. Hence, the model provides a more accurate method of understanding and predicting the breakdown of oxides from heavy-ion strikes