Title :
Ion-induced stuck bits in 1T/1C SDRAM cells
Author :
Edmonds, Larry D. ; Guertin, Steven M. ; Scheick, Leif Z. ; Nguyen, Duc ; Swift, Gary M.
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Radiation exposure of certain types of devices tends to stick bits, causing them to not be read out correctly after programming. Evidence of a linear trend in stuck bits in SDRAM memory cells is presented. This trend makes a cross section, as traditionally defined for single-event effects, unambiguous. However, there are considerable part-to-part variations in the cross section
Keywords :
DRAM chips; integrated circuit reliability; ion beam effects; 1T/1C SDRAM cells; SDRAM memory cells; SEE; dynamic random-access memories; heavy-ion irradiation; ion-induced stuck bits; proton irradiation; radiation exposure; single-event effects; stuck bit cross sections; synchronous DRAM; Annealing; Bit rate; Error analysis; History; Linearity; Propulsion; Protons; SDRAM; Single event upset; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
