Title :
Various SEU conditions in SRAM studied by 3-D device simulation
Author :
Castellani-Coulié, K. ; Palau, J.-M. ; Hubert, G. ; Calvet, M.-C. ; Dodd, P.E. ; Sexton, F.
Author_Institution :
CEM2, Univ. Montpellier II, France
fDate :
12/1/2001 12:00:00 AM
Abstract :
Various single-event upset (SEU) conditions are studied by three-dimensional device simulation with the purpose of going deeply into the understanding of the mechanisms governing the SEU sensitivity for a large variety of tracks. The results give a better view of what regions are sensitive. They clearly point out that some generally accepted notions must be revised as considering the normal incidence case to be the most sensitive or neglecting PMOS contribution
Keywords :
CMOS memory circuits; SRAM chips; electric charge; integrated circuit modelling; ion beam effects; radiation effects; sensitivity analysis; simulation; 3D device simulation; SEU conditions; SEU rate prediction; SEU sensitivity; SRAM sensitivity; commercial CMOS process; critical charge; geometrical track situations; ion tracks; ionizing particles; single-event upset conditions; static RAM; three-dimensional device simulation; Energy exchange; Helium; Hydrogen; Isotopes; MOSFET circuits; Neutrons; Particle tracking; Protons; Random access memory; Single event upset;
Journal_Title :
Nuclear Science, IEEE Transactions on
