DocumentCode :
1560453
Title :
Analytical microdosimetry model for proton-induced SEU in modern devices
Author :
Barak, J.
Author_Institution :
Soreq Nucl. Res. Center, Yavne´´el, Israel
Volume :
48
Issue :
6
fYear :
2001
fDate :
12/1/2001 12:00:00 AM
Firstpage :
1937
Lastpage :
1945
Abstract :
Analytical expressions were derived for the probability of having a secondary ion with a given linear energy transfer value following a p+Si nuclear event. Proton-induced single-event upset cross sections are calculated by integrating this probability with the heavy-ion cross section. The model yields good agreement with the measured cross sections of present device technologies. It is expected to be even better for future submicrometer devices. The approach of the new model is used for other applications like the total ionizing dose of the products of the p+Si reactions
Keywords :
dosimetry; integrated circuit modelling; probability; proton effects; semiconductor device models; analytical microdosimetry model; heavy-ion cross section; linear energy transfer value; p+Si nuclear event; probability; proton-induced SEU cross sections; proton-induced single events; secondary ion; single-event upset; submicron devices; total ionizing dose; Alpha particles; Analytical models; Energy exchange; Neutrons; Predictive models; Probability; Projectiles; Protons; Silicon on insulator technology; Single event upset;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.983154
Filename :
983154
Link To Document :
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