DocumentCode
1560455
Title
Detailed analysis of secondary ions´ effect for the calculation of neutron-induced SER in SRAMs
Author
Hubert, G. ; Palau, J.-M. ; Castellani-Coulié, K. ; Calvet, M.-C. ; Fourtine, S.
Author_Institution
CEM2, Univ. Montpellier II, France
Volume
48
Issue
6
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
1953
Lastpage
1959
Abstract
A new method of neutron soft error rate calculation derived from device simulations and nuclear physics results is presented. The main inputs are only a critical linear energy transfer, a critical charge, and layout dimensions. No classical sensitive volume size is needed because the extension of the sensitive region is described in terms of the variation of the ion efficacy versus its position with respect to the sensitive drain
Keywords
SRAM chips; circuit simulation; integrated circuit modelling; integrated circuit reliability; integrated circuit testing; neutron effects; SRAMs; critical charge; critical linear energy transfer; device simulations; ion efficacy; layout dimensions; neutron-induced SER; nuclear physics results; secondary ions´ effect; single-event upset; soft error rate calculation; Aerospace electronics; Databases; Energy exchange; Error analysis; Neutrons; Nuclear physics; Nuclear power generation; Random access memory; Single event upset; Vehicles;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.983156
Filename
983156
Link To Document