Title :
SEU induced by pions in memories from different generations
Author :
Duzellier, S. ; Falguére, D. ; Tverskoy, M. ; Ivanov, E. ; Dufayel, R. ; Calvet, M.-C.
Author_Institution :
ONERA-DESP, Toulouse, France
fDate :
12/1/2001 12:00:00 AM
Abstract :
This paper presents single-event upset cross-sections obtained with pions for a set of SRAMs/DRAMs from different generations. The experimental results show that pions are not more efficient than protons in creating upsets. Predictions using the two-parameters model are presented and discussed
Keywords :
CMOS memory circuits; DRAM chips; SRAM chips; integrated circuit measurement; integrated circuit modelling; meson effects; DRAM; SEU cross-sections prediction; SRAM; dynamic RAMs; pion-induced SEUs; pions; semiconductor memories; single-event upset; static RAMs; two-parameters model; Aerospace electronics; Aircraft; Mesons; Neutrons; Particle beams; Pollution measurement; Protons; Random access memory; Single event upset; Testing;
Journal_Title :
Nuclear Science, IEEE Transactions on
