Title :
SEE analysis of digital InP-based HBT circuits at gigahertz frequencies
Author :
Weatherford, Todd R. ; Schiefelbein, Peter K.
Author_Institution :
Naval Postgraduate Sch., Monterey, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
A device/circuit simulation is used to analyze a gigahertz clocked emitter-coupled logic circuit being perturbed by a single event. Results provide an understanding of charge collection in the heterojunction bipolar transistor. A technique for single-event hardening is demonstrated by simulation
Keywords :
III-V semiconductors; bipolar logic circuits; circuit simulation; emitter-coupled logic; heterojunction bipolar transistors; indium compounds; integrated circuit modelling; radiation effects; radiation hardening (electronics); III V semiconductors; InP; SEE analysis; charge collection; device/circuit simulation; digital HBT circuits; emitter-coupled logic circuit; gigahertz frequencies; heterojunction bipolar transistor; single event; single-event hardening; Circuit simulation; Clocks; Computational modeling; Frequency; Heterojunction bipolar transistors; Integrated circuit measurements; Integrated circuit technology; Logic circuits; Space technology; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
