Title :
Displacement damage in silicon due to secondary neutrons, pions, deuterons, and alphas from proton interactions with materials
Author :
Jun, Insoo ; McAlpine, William
Author_Institution :
Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
The enhancement of displacement damage energy deposition due to secondary neutrons, pions, deuterons, and alphas resulting from high-energy (100-1000 MeV) proton interactions with aluminum and tungsten shielding are examined in this paper. The results obtained using a comprehensive Monte Carlo charged particle transport code, MCNPX Version 2.1.5, indicated that the dominant secondary particle is neutrons. The additional contribution to the displacement damage energy produced by secondary pions, deuterons, and alphas turned out to be less than 5%
Keywords :
Monte Carlo methods; alpha-particle effects; aluminium; deuteron effects; elemental semiconductors; neutron effects; proton effects; radiation hardening (electronics); silicon; tungsten; 100 to 1000 MeV; Al; Monte Carlo charged particle transport code; Si; W; alphas; aluminum; deuterons; displacement damage; displacement damage energy; energy deposition; pions; proton interactions; secondary neutrons; secondary particle; silicon; tungsten shielding; Aluminum; Energy loss; Laboratories; Mesons; Monte Carlo methods; Neutrons; Propulsion; Protons; Silicon; Tungsten;
Journal_Title :
Nuclear Science, IEEE Transactions on
