Displacement damage in silicon due to secondary neutrons, pions, deuterons, and alphas from proton interactions with materials

Author

Jun, Insoo ; McAlpine, William

Author_Institution

Jet Propulsion Lab., California Inst. of Technol., Pasadena, CA, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2034

Lastpage

2038

Abstract

The enhancement of displacement damage energy deposition due to secondary neutrons, pions, deuterons, and alphas resulting from high-energy (100-1000 MeV) proton interactions with aluminum and tungsten shielding are examined in this paper. The results obtained using a comprehensive Monte Carlo charged particle transport code, MCNPX Version 2.1.5, indicated that the dominant secondary particle is neutrons. The additional contribution to the displacement damage energy produced by secondary pions, deuterons, and alphas turned out to be less than 5%

Keywords

Monte Carlo methods; alpha-particle effects; aluminium; deuteron effects; elemental semiconductors; neutron effects; proton effects; radiation hardening (electronics); silicon; tungsten; 100 to 1000 MeV; Al; Monte Carlo charged particle transport code; Si; W; alphas; aluminum; deuterons; displacement damage; displacement damage energy; energy deposition; pions; proton interactions; secondary neutrons; secondary particle; silicon; tungsten shielding; Aluminum; Energy loss; Laboratories; Mesons; Monte Carlo methods; Neutrons; Propulsion; Protons; Silicon; Tungsten;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983168

Filename

983168