Title :
FGMOS dosimetry: design and implementation
Author :
Martin, Mark N. ; Roth, David R. ; Garrison-Darrin, Ann ; McNulty, Peter J. ; Andreou, Andreas G.
Author_Institution :
Appl. Phys. Lab., Johns Hopkins Univ., Laurel, MD, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
We present results from a radiation dosimeter based on the erasure of floating-gate MOS transistors. Background theory and analysis necessary to describe the operation of the sensor are presented
Keywords :
MOSFET; dosimeters; semiconductor counters; FGMOS dosimetry; floating-gate MOS transistor; radiation dosimeter; Charge carrier processes; Circuit synthesis; Dosimetry; Electrons; Ionizing radiation sensors; MOSFET circuits; Physics; Radiation effects; Sensor phenomena and characterization; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
