Radiation-induced leakage currents: atomic scale mechanisms

We link atomic-scale MOS gate oxide silicon dangling bond defects called E´ centers to radiation-induced leakage current (RILC). We present evidence that strongly suggests that RILC tolerance is processing dependent and that this tolerance appears to be correlated with lower E´ center generation. We furthermore note that in oxides subjected to quite high irradiation levels, the density of (generally electrically neutral) E´ centers is far greater than would be expected for the hole trap E´ centers involved in the radiation-induced positive charge build-up observed in thicker oxides