DocumentCode :
1560481
Title :
NIEL and damage correlations for high-energy protons in gallium arsenide devices
Author :
Messenger, Scott R. ; Walters, Robert J. ; Burke, Edward A. ; Summers, Geoffrey P. ; Xapsos, Michael A.
Author_Institution :
SFA Inc., Largo, MD, USA
Volume :
48
Issue :
6
fYear :
2001
fDate :
12/1/2001 12:00:00 AM
Firstpage :
2121
Lastpage :
2126
Abstract :
A longstanding discrepancy between proton nonionizing energy loss (NIEL) calculations and experimental measurements in GaAs devices for E>20 MeV is explored. The various calculations of proton NIEL in GaAs are consistent. The experimental results and calculations can be made to agree by various methods that restrict the effect of high-energy recoils, such as the neutron "damage efficiency function." However, it should be noted that some damage coefficients track the total NIEL and further work is clearly required
Keywords :
III-V semiconductors; carrier lifetime; energy loss of particles; gallium arsenide; minority carriers; proton effects; radiation hardening (electronics); semiconductor device measurement; 20 MeV; GaAs; GaAs devices; NIEL; damage coefficients; damage correlations; high-energy protons; high-energy recoils; neutron damage efficiency function; proton nonionizing energy loss; Energy loss; Energy measurement; Gallium arsenide; Ionization; Laboratories; Large Hadron Collider; Light emitting diodes; Neutrons; Protons; Radiation detectors;
fLanguage :
English
Journal_Title :
Nuclear Science, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9499
Type :
jour
DOI :
10.1109/23.983182
Filename :
983182
Link To Document :
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