Photoluminescence due to boron-related defect in solar cell silicon irradiated with 1 MeV electrons

Author

Tajima, Michio ; Warashina, Masatoshi ; Hisamatsu, Tadashi ; Matsuda, Sumio

Author_Institution

Inst. of Space & Astronaut. Sci., Sagamihara, Japan

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2127

Lastpage

2130

Abstract

We investigated a new photoluminescence line at 0.87 eV in B-doped Si irradiated with 1 MeV electrons. We identified its origin as a complex of an interstitial B and an interstitial O (B_i-O_i), one of the major defects responsible for the degradation of space solar cells. The relative intensity of the line increases with the electron fluence and with the B-concentration. The activation energy of the electronic level responsible for the line is estimated to be 0.30 and 0.26 eV from the spectral shape analysis and the temperature dependence, respectively. These values agree with the energy level of the Bi-Oi defect. The agreement of the thermal stability between the line and the Bi-Oi defect also proves the validity of the idea that the 0.87 eV line is due to the B_i-O_i defect

Keywords

boron; defect states; electron beam effects; elemental semiconductors; impurity states; interstitials; oxygen; photoluminescence; radiation hardening (electronics); silicon; solar cells; 0.26 eV; 0.30 eV; 0.87 eV; 1 MeV; 1 MeV electrons; B-concentration; Si:B solar cell; Si:B,O; activation energy; electron fluence; electronic level; interstitial B; interstitial O; photoluminescence line; spectral shape analysis; temperature dependence; thermal stability; Degradation; Electrons; Energy states; Photoluminescence; Photovoltaic cells; Silicon; Spectral analysis; Spectral shape; Temperature dependence; Thermal stability;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983183

Filename

983183