Direct experimental evidence for atomic scale structural changes involved in the interface-trap transformation process

Author

Lenahan, P.M. ; Mishima, T.D. ; Jumper, J. ; Fogarty, T.N. ; Wilkins, R.T.

Author_Institution

Dept. of Eng. Sci. & Mech., Pennsylvania State Univ., University Park, PA, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2131

Lastpage

2135

Abstract

We have identified atomic scale processes involved in the so called "interface trap transformation" process. These changes involve the generation of a silicon "dangling bond" defect called P_b1. This defect is somewhat different in electronic density of states and slightly different in physical structure than the dominating radiation induced Si/SiO₂ interface trap defect, the P_b0 center

Keywords

MOSFET; dangling bonds; electronic density of states; gamma-ray effects; interface states; paramagnetic resonance; proton effects; radiation hardening (electronics); MOSFET; Si-SiO₂; atomic scale structural changes; dangling bond generation; electron spin resistance; electronic density of states; gamma irradiation; interface-trap transformation process; proton bombardment; radiation hardened microelectronics; radiation induced interface trap; spin dependent recombination ESR; Atomic measurements; Bonding; Density measurement; Electron traps; Extraterrestrial measurements; MOSFET circuits; Paramagnetic resonance; Photonic band gap; Physics; Silicon;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983184

Filename

983184