Title :
Anomalous radiation effects in fully depleted SOI MOSFETs fabricated on SIMOX
Author :
Li, Ying ; Niu, Guofu ; Cressler, John D. ; Patel, Jagdish ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A. ; Palmer, Michael J.
Author_Institution :
Dept. of Electr. & Comput. Eng., Auburn Univ., AL, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
We investigate the proton tolerance of fully depleted silicon-on-insulator (SOI) MOSFETs with H-gate and regular-gate structural configurations. For the front-gate characteristics, the H-gate does not show the edge leakage observed in the regular-gate transistor. An anomalous kink in the back-gate linear ID-V GS characteristics of the fully depleted SOI nFETs has been observed at high radiation doses. This kink is attributed to charged traps generated in the bandgap at the buried oxide/silicon film interface during irradiation. Extensive two-dimensional simulations with MEDICI were used to understand the physical origin of this kink. We also report unusual self-annealing effects in the devices when they are cooled to liquid nitrogen temperature
Keywords :
MOSFET; SIMOX; annealing; buried layers; interface states; leakage currents; proton effects; radiation hardening (electronics); semiconductor device models; H-gate configurations; MEDICI; SIMOX; Si-SiO2; anomalous kink; anomalous radiation effects; back-gate linear I-V characteristics; buried oxide/silicon film interface; charged traps; edge leakage; electron charge density; front-gate characteristics; fully depleted SOI MOSFET; high radiation doses; proton tolerance; regular-gate configurations; self-annealing effects; strong inversion region; total dose hardness; two-dimensional simulations; CMOS technology; Isolation technology; MOSFETs; Microelectronics; Photonic band gap; Protons; Radiation effects; Semiconductor films; Silicon on insulator technology; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
