Title :
Early lethal SEGR failures of VDMOSFETs considering nonuniformity in the rad-hard device distribution
Author :
Wheatley, Thomas H. ; Wheatley, C. Frank ; Titus, Jeffrey L.
fDate :
12/1/2001 12:00:00 AM
Abstract :
In 1999, Titus et al. studied single-event gate rupture failures of vertical MOSFETs for many parameters where the MOSFET universe was assumed to consist of homogeneous devices. A non-homogeneous universe is now considered. Time-to-failure is studied using Monte Carlo methods. Boundaries are ascribed applying the empirical equation presented by Titus et al
Keywords :
MOSFET; Monte Carlo methods; failure analysis; radiation hardening (electronics); semiconductor device reliability; MOSFET; Monte Carlo methods; VDMOSFET; early lethal SEGR failures; empirical equation; homogeneous devices; inhomogeneous MOSFETs; nonuniformity; rad-hard device distribution; single-event gate rupture failures; time-to-failure; vertical MOSFETs; Cranes; Electronic components; Integral equations; MOSFETs; Monte Carlo methods; Orbits; Protons; Radiation hardening; Risk management; Space vehicles;
Journal_Title :
Nuclear Science, IEEE Transactions on
