Title :
The effects of proton irradiation on SiGe:C HBTs
Author :
Zhang, Shiming ; Niu, Guofu ; Cressler, John D. ; Osten, Hans-Joerg ; Knoll, Dieter ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A.
Author_Institution :
Electeical & Comput. Eng. Dept., Auburn Univ., AL, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
The effects of 63 MeV proton irradiation on SiGe:C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe:C HBTs were investigated for proton fluences up to 5×1013 p/cm2. A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe:C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response
Keywords :
Ge-Si alloys; carbon; electron-hole recombination; heterojunction bipolar transistors; proton effects; semiconductor materials; 63 MeV; HBTs; SiGe:C; dc characteristics; heterojunction bipolar transistors; neutral base recombination; proton exposure; proton irradiation; radiation response; Aerospace engineering; Boron; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Physics; Protons; Silicon germanium; Space technology;
Journal_Title :
Nuclear Science, IEEE Transactions on
