The effects of proton irradiation on SiGe:C HBTs

Author

Zhang, Shiming ; Niu, Guofu ; Cressler, John D. ; Osten, Hans-Joerg ; Knoll, Dieter ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A.

Author_Institution

Electeical & Comput. Eng. Dept., Auburn Univ., AL, USA

Volume

48

Issue

6

fYear

2001

fDate

12/1/2001 12:00:00 AM

Firstpage

2233

Lastpage

2237

Abstract

The effects of 63 MeV proton irradiation on SiGe:C heterojunction bipolar transistors (HBTs) are reported for the first time. The dc characteristics and neutral base recombination of these SiGe:C HBTs were investigated for proton fluences up to 5×10¹³ p/cm². A comparison is made with SiGe HBTs fabricated in the same technology. Despite the fact that these SiGe:C HBTs degrade significantly during proton exposure, there is no indication that the carbon doping has any significant impact on the radiation response

Keywords

Ge-Si alloys; carbon; electron-hole recombination; heterojunction bipolar transistors; proton effects; semiconductor materials; 63 MeV; HBTs; SiGe:C; dc characteristics; heterojunction bipolar transistors; neutral base recombination; proton exposure; proton irradiation; radiation response; Aerospace engineering; Boron; Fabrication; Germanium silicon alloys; Heterojunction bipolar transistors; Microelectronics; Physics; Protons; Silicon germanium; Space technology;

fLanguage

English

Journal_Title

Nuclear Science, IEEE Transactions on

Publisher

ieee

ISSN

0018-9499

Type

jour

DOI

10.1109/23.983201

Filename

983201