• DocumentCode
    1560503
  • Title

    1/f noise in proton-irradiated SiGe HBTs

  • Author

    Jin, Zhenrong ; Niu, Guofu ; Cressler, John D. ; Marshall, Cheryl J. ; Marshall, Paul W. ; Kim, Hak S. ; Reed, Robert A. ; Harame, David L.

  • Author_Institution
    Electr. & Comput. Eng. Dept., Auburn Univ., AL, USA
  • Volume
    48
  • Issue
    6
  • fYear
    2001
  • fDate
    12/1/2001 12:00:00 AM
  • Firstpage
    2244
  • Lastpage
    2249
  • Abstract
    Investigates the impact of proton irradiation on the 1/f noise in ultra-high-voltage chemical-vapor deposition SiGe heterojunction bipolar transistors. The relative degradation of 1/f noise shows a strong dependence on device geometry. Both the geometry dependence and the bias dependence of 1/f noise change significantly after exposure to 2×1013 p/cm2 protons. An expression describing the 1/f noise is derived and used to explain the experimental observations
  • Keywords
    1/f noise; Ge-Si alloys; heterojunction bipolar transistors; power bipolar transistors; proton effects; semiconductor device noise; semiconductor materials; 1/f noise; SiGe; bias dependence; device geometry; proton-irradiated HBTs; ultra-high-voltage transistors; Circuit noise; Current measurement; Degradation; Equivalent circuits; Fluctuations; Germanium silicon alloys; Heterojunction bipolar transistors; Low-frequency noise; Noise measurement; Silicon germanium;
  • fLanguage
    English
  • Journal_Title
    Nuclear Science, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9499
  • Type

    jour

  • DOI
    10.1109/23.983203
  • Filename
    983203
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=1560503