DocumentCode
1560505
Title
Correlation between nonionizing energy loss and the offset voltage shift in InP-InGaAs heterojunction bipolar transistors
Author
Shatalov, Alexei ; Subramanian, S. ; Klein, Andrew
Author_Institution
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
Volume
48
Issue
6
fYear
2001
fDate
12/1/2001 12:00:00 AM
Firstpage
2262
Lastpage
2269
Abstract
Nonionizing energy loss (NIEL) calculations are reported for the neutron, electron, and gamma irradiation in InGaAs. We discuss the correlation between the calculated NIEL values and the experimentally observed offset voltage shift in InP-InGaAs heterojunction bipolar transistors
Keywords
III-V semiconductors; electron beam effects; gallium arsenide; gamma-ray effects; heterojunction bipolar transistors; indium compounds; neutron effects; InP-InGaAs; NIEL; electron irradiation; gamma irradiation; heterojunction bipolar transistors; neutron irradiation; nonionizing energy loss; offset voltage shift; Bipolar transistors; Electrons; Energy loss; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Libraries; Neutrons; Radiation effects; Voltage;
fLanguage
English
Journal_Title
Nuclear Science, IEEE Transactions on
Publisher
ieee
ISSN
0018-9499
Type
jour
DOI
10.1109/23.983205
Filename
983205
Link To Document