Title :
Correlation between nonionizing energy loss and the offset voltage shift in InP-InGaAs heterojunction bipolar transistors
Author :
Shatalov, Alexei ; Subramanian, S. ; Klein, Andrew
Author_Institution :
Dept. of Electr. & Comput. Eng., Oregon State Univ., Corvallis, OR, USA
fDate :
12/1/2001 12:00:00 AM
Abstract :
Nonionizing energy loss (NIEL) calculations are reported for the neutron, electron, and gamma irradiation in InGaAs. We discuss the correlation between the calculated NIEL values and the experimentally observed offset voltage shift in InP-InGaAs heterojunction bipolar transistors
Keywords :
III-V semiconductors; electron beam effects; gallium arsenide; gamma-ray effects; heterojunction bipolar transistors; indium compounds; neutron effects; InP-InGaAs; NIEL; electron irradiation; gamma irradiation; heterojunction bipolar transistors; neutron irradiation; nonionizing energy loss; offset voltage shift; Bipolar transistors; Electrons; Energy loss; Heterojunction bipolar transistors; Indium gallium arsenide; Indium phosphide; Libraries; Neutrons; Radiation effects; Voltage;
Journal_Title :
Nuclear Science, IEEE Transactions on
