Title :
Design of harmonic-tuned dual-band GaN HEMT power amplifier based on genetic algorithm
Author :
Kokolov, A.A. ; Sheyerman, F.I. ; Colantonio, P. ; Babak, L.I.
Author_Institution :
TUSUR, Tomsk, Russia
Abstract :
The design of a harmonic-tuned dual-band GaN HEMT power amplifier (1.28 GHz and 2.14 GHz) is presented. The transistor´s load impedance at the fundamental frequency, the second and third harmonics in both pass-bands were optimally selected to increase the output power and efficiency. In order to design an output matching network from these data, a new CAD procedure has been used that is implemented by means of the genetic-algorithm-based software for automatic synthesis of passive networks. This allows facilitating and accelerating the network design significantly. The measured performances of the dual-band amplifier are as follows: Pout = 37.28 dBm, G = 11 dB, PAE = 42.1% at f1 = 1.28 GHz; Pout = 35.7 dBm, G = 9 dB, PAE = 23.7% at f2 = 2.14 GHz.
Keywords :
III-V semiconductors; UHF field effect transistors; UHF power amplifiers; gallium compounds; genetic algorithms; passive networks; power HEMT; power amplifiers; technology CAD (electronics); wide band gap semiconductors; CAD procedure; GaN; dual-band amplifier; efficiency 23.7 percent; efficiency 42.1 percent; frequency 1.28 GHz; frequency 2.14 GHz; gain 11 dB; gain 9 dB; genetic-algorithm-based software; harmonic-tuned dual-band HEMT power amplifier; output matching network; passive network; transistor load impedance; Dual band; Gallium nitride; Genetics; HEMTs;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959305
