Title :
Design of a CMOS image sensor with pixel-level ADC in 0.35 μm process
Author :
Hashemi, F. ; Hadidi, K.H. ; Khoei, A.
Author_Institution :
Microelectron. Res. Center, Urmia Univ., Iran
Abstract :
A CMOS image sensor with pixel-level ADC is presented. It has been designed in a 0.35 μm single-poly, 4 metal, n-well standard digital CMOS process. Such an image sensor can achieve low power consumption due to its parallel performance and very low speed. In this paper, we try to improve the performance of the ADCs used. A CMOS image sensor with 318×258 pixels has been designed so that each 30 pixel block shares an ADC. The ADC has 10 bit resolution and 58 dB SNR. The power consumption for 8 and 10-bit resolution for the sensor array are 19.5 mW and 28.3 mW, respectively, at 30 frames/s. By using this novel method, the fill factor value increases by up to 25%. Die area of the chip without a pad is 2.8 1×3.56 mm2.
Keywords :
CMOS image sensors; analogue-digital conversion; integrated circuit design; low-power electronics; 0.35 micron; 10-bit resolution; 19.5 mW; 258 pixel; 28.3 mW; 318 pixel; 8-bit resolution; 82044 pixel; CMOS image sensor; die area; fill factor; low power consumption; parallel performance; pixel-level ADC; sensor array; single-poly 4-metal n-well standard digital CMOS process; very low speed; CMOS image sensors; CMOS process; CMOS technology; Energy consumption; Image converters; Image sensors; Pixel; Power system reliability; Scalability; Sensor arrays;
Conference_Titel :
Circuits and Systems, 2003. ISCAS '03. Proceedings of the 2003 International Symposium on
Print_ISBN :
0-7803-7761-3
DOI :
10.1109/ISCAS.2003.1206045
