DocumentCode :
156067
Title :
Investigation of behavioral models for MMIC elements
Author :
Salnikov, A.S.
Author_Institution :
Tomsk State Univ. of Control Syst. & Radioelectron. (TUSUR Univ.), Tomsk, Russia
fYear :
2014
fDate :
7-13 Sept. 2014
Firstpage :
119
Lastpage :
120
Abstract :
Behavioral models for MMIC elements based on three multidimensional approximation techniques, i.e., artificial neural networks (ANN), radial basis functions method, and inverse distance weighting (IDW) method, are investigated. As a test example, the parametric models for describing a frequency dependence of scattering parameters of GaAs pHEMT in different DC operating points have been constructed. It is shown that IDW model demonstrates the accuracy and calculation speed that are comparable with ANN model. However, IDW method needs much lesser time for the model building. Thus, it can be successfully used for constructing MMIC elements´ behavioral models.
Keywords :
HEMT integrated circuits; III-V semiconductors; MMIC; S-parameters; gallium arsenide; high electron mobility transistors; radial basis function networks; telecommunication computing; ANN model; GaAs; GaAs pHEMT scattering parameter frequency dependence; MMIC element; artificial neural network; behavioral model investigation; different DC operating point; inverse distance weighting method; lDW model; radial basis function method; three multidimensional approximation technique;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
Type :
conf
DOI :
10.1109/CRMICO.2014.6959317
Filename :
6959317
Link To Document :
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