Title :
Extraction of high-power multicell transistor parameters
Author :
Krylov, B.V. ; Dobychina, E.M. ; Malakhov, R.Y. ; Sergeev, B.B.
Author_Institution :
FSUE CNIRTI, Moscow, Russia
Abstract :
Extraction procedure of high-power multicell transistor parameters was proposed and described. Test plate for extraction verification was designed. Extraction results were confirmed by experimental data.
Keywords :
power HEMT; high-power multicell transistor parameter extraction; power HEMT; test plate; Logic gates; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; PHEMTs;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959319
