• DocumentCode
    156069
  • Title

    Extraction of high-power multicell transistor parameters

  • Author

    Krylov, B.V. ; Dobychina, E.M. ; Malakhov, R.Y. ; Sergeev, B.B.

  • Author_Institution
    FSUE CNIRTI, Moscow, Russia
  • fYear
    2014
  • fDate
    7-13 Sept. 2014
  • Firstpage
    123
  • Lastpage
    124
  • Abstract
    Extraction procedure of high-power multicell transistor parameters was proposed and described. Test plate for extraction verification was designed. Extraction results were confirmed by experimental data.
  • Keywords
    power HEMT; high-power multicell transistor parameter extraction; power HEMT; test plate; Logic gates; Microwave FET integrated circuits; Microwave amplifiers; Microwave integrated circuits; PHEMTs;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
  • Conference_Location
    Sevastopol
  • Print_ISBN
    978-966-335-412-5
  • Type

    conf

  • DOI
    10.1109/CRMICO.2014.6959319
  • Filename
    6959319
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=156069