Title :
InP/InGaAsP/InP double hetero-junction solar cells with increased short-circuit current
Author :
Kim, Choul-Young ; Cha, Jung-Ho ; Kim, Jaeho ; Kwon, Young-Se
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea
Abstract :
We have investigated the InP/InGaAsP double heterojunction (DH) structure solar cell and compared it with the InP control cells. The InP lattice matched InGaAsP has various band gap from 0.75 eV to 1.35 eV. We have investigated the InP/InGaAsP DH solar cell having the 1.1 eV InGaAsP absorption layer. The InP/InGaAsP DH cell has a lower open-circuit voltage by 20.17 % than the InP cell. The short-circuit current improves by 100 %. Consequently, the conversion efficiency of the cell improves by 50.18 % via the InP/InGaAsP DH structure.
Keywords :
III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; short-circuit currents; solar cells; InP-InGaAsP-InP; InP/InGaAsP/InP double heterojunction solar cells; absorption layer; band gap; conversion efficiency; lattice match; open-circuit voltage; short-circuit current; Absorption; Current density; DH-HEMTs; Indium phosphide; Lattices; Photonic band gap; Photovoltaic cells; Quantum well devices; Radiative recombination; Voltage;
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
Print_ISBN :
0-7803-8707-4
DOI :
10.1109/PVSC.2005.1488228
