InP/InGaAsP/InP double hetero-junction solar cells with increased short-circuit current

Author

Kim, Choul-Young ; Cha, Jung-Ho ; Kim, Jaeho ; Kwon, Young-Se

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., KAIST, Daejeon, South Korea

fYear

2005

Firstpage

703

Lastpage

706

Abstract

We have investigated the InP/InGaAsP double heterojunction (DH) structure solar cell and compared it with the InP control cells. The InP lattice matched InGaAsP has various band gap from 0.75 eV to 1.35 eV. We have investigated the InP/InGaAsP DH solar cell having the 1.1 eV InGaAsP absorption layer. The InP/InGaAsP DH cell has a lower open-circuit voltage by 20.17 % than the InP cell. The short-circuit current improves by 100 %. Consequently, the conversion efficiency of the cell improves by 50.18 % via the InP/InGaAsP DH structure.

Keywords

III-V semiconductors; energy gap; gallium arsenide; gallium compounds; indium compounds; semiconductor heterojunctions; short-circuit currents; solar cells; InP-InGaAsP-InP; InP/InGaAsP/InP double heterojunction solar cells; absorption layer; band gap; conversion efficiency; lattice match; open-circuit voltage; short-circuit current; Absorption; Current density; DH-HEMTs; Indium phosphide; Lattices; Photonic band gap; Photovoltaic cells; Quantum well devices; Radiative recombination; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE

ISSN

0160-8371

Print_ISBN

0-7803-8707-4

Type

conf

DOI

10.1109/PVSC.2005.1488228

Filename

1488228