Title :
Dimension effect in a linear model of a Ka-band GaN HEMT
Author :
Torkhov, N.A. ; Salnikov, A.S. ; Bozhkov, V.G. ; Babak, L.I. ; Dobush, I.M. ; Novikov, V.A.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
It is shown that electrophysical property fractality (for example, ρ=ρ(l,d)) of a heteroepitaxial AlGaN/GaN structure with two-dimensional electron gas has a strong influence on field effect transistor linear model. In the present work influence of fractality on inner elements values of transistor equivalent circuit is described. It is necessary to take this influence into the account during design and manufacturing of either power or low noise AlGaN/GaN HEMT.
Keywords :
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2D electron; AlGaN-GaN; HEMT; dimension effect; field effect transistor linear model; heteroepitaxial structure; high electron mobility transistors; transistor equivalent circuit; Gallium nitride;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959324
