DocumentCode
156074
Title
Dimension effect in a linear model of a Ka-band GaN HEMT
Author
Torkhov, N.A. ; Salnikov, A.S. ; Bozhkov, V.G. ; Babak, L.I. ; Dobush, I.M. ; Novikov, V.A.
Author_Institution
Sci.-Res. Inst. of Semicond., Tomsk, Russia
fYear
2014
fDate
7-13 Sept. 2014
Firstpage
133
Lastpage
134
Abstract
It is shown that electrophysical property fractality (for example, ρ=ρ(l,d)) of a heteroepitaxial AlGaN/GaN structure with two-dimensional electron gas has a strong influence on field effect transistor linear model. In the present work influence of fractality on inner elements values of transistor equivalent circuit is described. It is necessary to take this influence into the account during design and manufacturing of either power or low noise AlGaN/GaN HEMT.
Keywords
III-V semiconductors; aluminium compounds; equivalent circuits; gallium compounds; high electron mobility transistors; semiconductor device models; two-dimensional electron gas; wide band gap semiconductors; 2D electron; AlGaN-GaN; HEMT; dimension effect; field effect transistor linear model; heteroepitaxial structure; high electron mobility transistors; transistor equivalent circuit; Gallium nitride;
fLanguage
English
Publisher
ieee
Conference_Titel
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location
Sevastopol
Print_ISBN
978-966-335-412-5
Type
conf
DOI
10.1109/CRMICO.2014.6959324
Filename
6959324
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