Title :
3D-modeling elecrostatic system of Schottky contact
Author :
Torkhov, N.A. ; Salnikov, A.C. ; Kupreychik, A.F. ; Novikov, V.A. ; Minin, O.N. ; Babak, L.I.
Author_Institution :
Sci.-Res. Inst. of Semicond., Tomsk, Russia
Abstract :
Three-dimensional modeling of electrostatic metal-semiconductor contact with Schottky barrier has fully confirmed the presence of the experimentally observed extended halos with low contact difference of potentials of the surface around the contacts. The results show that changes in surface potentials around the contacts are caused by the spread of electric charge of the space charge region on a sufficiently large distance (l > 2 μm) under the action of electric field of periphery.
Keywords :
Schottky barriers; electric charge; semiconductor device models; Schottky barrier; Schottky contact; elecrostatic system 3D-modeling; electric charge; electrostatic metal-semiconductor contact; space charge; three-dimensional modeling; Space charge;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959326
