DocumentCode :
1560761
Title :
Lattice mismatched dual junction tandem cells
Author :
Pal, A.T. ; Wilt, David M. ; Clark, Eric B. ; Smith, Mark A. ; McElroy, Bruce D.
Author_Institution :
NASA Glenn Res. Center, Cleveland, OH, USA
fYear :
2005
Firstpage :
728
Lastpage :
730
Abstract :
High performance solar cells with capabilities covering a broad range of mission parameters are of great interest to the space photovoltaic community. Current areas of interest include improving efficiency of multi-junction cells by adjusting bandgaps to more optimum values, adding junctions to existing structures and investigating the effects of various substrate materials. The goal is to merge the highest efficiency multijunction solar cell with a low cost, lightweight substrate. This paper focuses on developing a multijunction solar cell with optimum bandgaps by relaxing the constraint for lattice matching between the substrate and the epitaxial cell structure. A III-V lattice mismatched dual junction solar cell composed of a 1.6 eV InGaP top cell and a 1.1 eV InGaAs bottom cell has been grown with an Air Mass Zero (AM0) efficiency of 16.4% without an antireflective coating (ARC). An AM0 efficiency of 23% is anticipated when a dual layer antireflective coating is applied. Both sub-cells are lattice matched to each other but mismatched to the GaAs substrate. Accommodation of the lattice strain was accomplished via an InGaAs buffer structure. Extension of the lattice mismatched approach to three junction devices holds the promise to demonstrate AM0 efficiencies in excess of 30%.
Keywords :
III-V semiconductors; antireflection coatings; energy gap; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor heterojunctions; solar cells; 16.4 percent; 23 percent; AM0 efficiency; Air Mass Zero efficiency; GaAs; GaAs substrate; InGaAs buffer structure; InGaAs-GaAs-InGaP; bandgap; bottom cell; dual layer antireflective coating; epitaxial cell structure; high performance solar cells; junction devices; lattice mismatched dual junction tandem cells; lattice strain; multijunction cell efficiency; top cell; Coatings; III-V semiconductor materials; Indium gallium arsenide; Lattices; Photonic band gap; Photovoltaic cells; Photovoltaic systems; Solar power generation; Space missions; Substrates;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Photovoltaic Specialists Conference, 2005. Conference Record of the Thirty-first IEEE
ISSN :
0160-8371
Print_ISBN :
0-7803-8707-4
Type :
conf
DOI :
10.1109/PVSC.2005.1488235
Filename :
1488235
Link To Document :
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