Title :
Conductivity of planar GaAs Schottky diode with small thickness of the active region
Author :
Asanov, E.E. ; Zuev, S.A. ; Kilessa, G.V. ; Despotuli, A.L. ; Andreeva, A.V.
Author_Institution :
Taurida V. I. Vernadsky Univ., Simferopol, Ukraine
Abstract :
The conductivity of the thin film Schottky diode on GaAs is investigated. It is shown that at a low thickness channel there is the changing nature of the relationship between voltage and conductivity of the diode, and it is explained by the spreading of the potential and, subsequently, the lack of inter-valley scattering.
Keywords :
III-V semiconductors; Schottky diodes; electrical conductivity; elemental semiconductors; gallium arsenide; thin film devices; active region; intervalley scattering lackness; low thickness channel; planar gallium arsenide Schottky diode conductivity; thin film Schottky diode conductivity; Physics;
Conference_Titel :
Microwave & Telecommunication Technology (CriMiCo), 2014 24th International Crimean Conference
Conference_Location :
Sevastopol
Print_ISBN :
978-966-335-412-5
DOI :
10.1109/CRMICO.2014.6959327
